Formation and stability of continuous buried SiO2 layers in SIMOX
- 1 February 1994
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 84 (2) , 234-237
- https://doi.org/10.1016/0168-583x(94)95761-4
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- precipitation in highly supersaturated oxygen-implanted single-crystal siliconPhysical Review B, 1993
- Analysis of buried oxide layer formation and mechanism of threading dislocation generation in the substoichiometric oxygen dose regionJournal of Materials Research, 1993
- Thin buried oxide in implanted siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Dislocation formation related with high oxygen dose implantation on siliconJournal of Applied Physics, 1991
- Practical reduction of dislocation density in SIMOX wafersElectronics Letters, 1990
- Surface morphology of oxygen-implanted wafersJournal of Materials Research, 1990
- Ion beam synthesis of thin buried layers of SiO2 in siliconVacuum, 1986