Low-voltage pentacene thin-film transistors with Ta2O5 gate insulators and their reversible light-induced threshold voltage shift

Abstract
We have fabricated pentacene thin-film transistors using Ta2O5 films prepared by magnetron reactive sputtering as gate insulators. These transistors exhibit good electrical characteristics at an operating voltage as low as 5 V, with a field-effect mobility of 0.32cm2∕Vs, an on∕off ratio of 104, and a subthreshold slope of 0.5V∕decade. We have also investigated the optical properties of these transistors and observed a reversible light-induced threshold voltage shift. Under illumination, the threshold voltage shifts towards the positive direction while the field-effect mobility and on∕off ratio remain almost unchanged. In the dark, however, the threshold voltage can slowly be restored to its original state. At a gate voltage of −5V, the transistors show a broadband responsivity of 3.7A∕W after illumination at 60μW∕cm2 for 10 min.

This publication has 16 references indexed in Scilit: