Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections
Top Cited Papers
- 9 July 2003
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 3 (8) , 1063-1066
- https://doi.org/10.1021/nl034422t
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Nanoscale Ultraviolet‐Light‐Emitting Diodes Using Wide‐Bandgap Gallium Nitride NanorodsAdvanced Materials, 2003
- Single-crystal gallium nitride nanotubesNature, 2003
- One‐Dimensional Nanostructures: Synthesis, Characterization, and ApplicationsAdvanced Materials, 2003
- Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic NanodevicesNano Letters, 2003
- Single gallium nitride nanowire lasersNature Materials, 2002
- Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxyJournal of Applied Physics, 2002
- Strained gallium nitride nanowiresThe Journal of Chemical Physics, 2002
- Gallium Nitride Nanowire NanodevicesNano Letters, 2002
- Catalytic Growth and Characterization of Gallium Nitride NanowiresJournal of the American Chemical Society, 2001
- Laser-Assisted Catalytic Growth of Single Crystal GaN NanowiresJournal of the American Chemical Society, 1999