Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy
- 18 July 2002
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 92 (3) , 1307-1316
- https://doi.org/10.1063/1.1489711
Abstract
No abstract availableThis publication has 34 references indexed in Scilit:
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