Co/Si(111) interface: Formation of an initial CoSi2 phase at room temperature
- 2 November 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (18) , 1448-1450
- https://doi.org/10.1063/1.98653
Abstract
Ultrathin films (≲50 monolayers) of Co have been deposited on atomically clean 7×7 Si(111) surfaces at room temperature and characterized by in situ surface techniques such as Auger electron spectroscopy and low‐energy electron diffraction. Formation of a boundary CoSi2‐like phase is surprisingly found at a very low coverage range (≲4 monolayers) as evidenced by low‐temperature transport measurements (resistivity and Hall effect) and also by cross‐sectional high‐resolution transmission electron microscopy.Keywords
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