Characteristics of irradiated silicon microstrip detectors with and substrates
- 28 June 2001
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 466 (2) , 354-358
- https://doi.org/10.1016/s0168-9002(01)00588-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Radiation damage studies of silicon microstrip sensorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Characterization ofp-in-n ATLAS silicon microstrip detectors fabricated by Hamamatsu Photonics and irradiated with 24 GeV/c protons to 3 × 1014 pcm-2Il Nuovo Cimento A (1971-1996), 1999
- Comparative study of (111) and (100) crystals and capacitance measurements on Si strip detectors in CMSIl Nuovo Cimento A (1971-1996), 1999