Photoluminescence Study of CuInSe2 Thin Films Prepared by the Selenization Technique
- 1 June 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (6B) , L753
- https://doi.org/10.1143/jjap.31.l753
Abstract
CuInSe2 thin films were prepared by the selenization technique with solid- or vapor-phase selenium, and photoluminescence measurements were carried out to identify the energy levels associated with various defect structures. The possible origins of these defect states are discussed on the basis of the reported energy level diagram of single-crystal and thin-film CuInSe2. It is found that the photoluminescence measurement is sensitive to native defects and formation kinetics of CuInSe2 and useful in the optimization of the selenization process.Keywords
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