Studies of steam-oxidized WSi2 by Auger sputter profiling
- 1 August 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (3) , 305-307
- https://doi.org/10.1063/1.91915
Abstract
We have studied steam‐oxidized WSi2 films sputter deposited upon Si and SiO2 substrates using Auger sputter profiling. As previously reported, steam oxidation produces an SiO2 surface layer. Silicon is supplied to the growing SiO2 layer by the conversion of the WSi2 to W5Si3, and additional Si is supplied by diffusion through the WSi2 layer only for the case of a Si substrate. The W5Si3 is distributed throughout the silicide layer, but with slightly higher concentration at the SiO2‐silicide interface. This interface also contains an oxidized tungsten phase possibily is the form of a WxSiyOz compound.Keywords
This publication has 4 references indexed in Scilit:
- Kinetics of the thermal oxidation of WSi2Applied Physics Letters, 1979
- Oxidation mechanisms in WSi2 thin filmsApplied Physics Letters, 1978
- Auger depth profiling of MNOS structures by ion sputteringIEEE Transactions on Electron Devices, 1977
- An Auger analysis of the SiO2-Si interfaceJournal of Applied Physics, 1976