Room-temperature continuous-wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor deposition
- 20 April 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (16) , 1033-1034
- https://doi.org/10.1063/1.97961
Abstract
Room‐temperature continuous‐wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 °C for a device with an 8‐μm‐wide and a 250‐μm‐long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T0 was 138 K under cw operation. The wafer with the MQW structure composed of 100‐Å‐thick GaInP wells and 40‐Å‐thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.Keywords
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