Optoelectrical properties of amorphous-crystalline silicon heterojunctions
- 15 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4) , 452-454
- https://doi.org/10.1063/1.95212
Abstract
Optoelectrical properties of a heterojunction consisting of p-type hydrogenated amorphous silicon (a-Si:H) on n-type crystalline silicon (c-Si) have been investigated by measuring current–voltage and capacitance–voltage characteristics and the temperature dependence of the dark current. It was found that the hole injection from n-type c-Si into p-type a-Si:H depended mainly on control of the impurity concentration in a-Si:H doped with boron at the junction interface. The results obtained for the dark current and photocurrent (with 100 1×illumination) were 7.3 nA cm−2 and 41 μA cm−2, respectively, at an applied voltage of 5 V. These results hold promise for applications to a silicon vidicon target without a diode array.Keywords
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