Deep level defects in heteroepitaxial zinc selenide
- 1 April 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (4) , 3076-3084
- https://doi.org/10.1063/1.331054
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Electron mobility and carrier concentration of heteroepitaxial zinc selenideJournal of Applied Physics, 1982
- High-conductivity heteroepitaxial ZnSe filmsApplied Physics Letters, 1980
- Deep level defects in Au/ZnSe Schottky diodesElectronics Letters, 1980
- Donor-acceptor pair bands in ZnSePhysical Review B, 1979
- Shallow acceptors and p-type ZnSeApplied Physics Letters, 1979
- The Defect Structure of Pure and Doped ZnSeJournal of the Electrochemical Society, 1978
- p-n junction zinc sulfo-selenide and zinc selenide light-emitting diodesApplied Physics Letters, 1975
- High Electron Mobility in Zinc Selenide Through Low-Temperature AnnealingJournal of Applied Physics, 1971
- Evidence for a native donor in ZnSe from high temperature electrical measurementsSolid State Communications, 1969
- Correlation between Irradiation and Thermally Induced Defects in II-VI CompoundsPhysical Review B, 1963