Atom-Probe Study of Al-Ga Exchange Reaction at Al-GaAs Interfaces
- 24 September 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (13) , 1252-1255
- https://doi.org/10.1103/physrevlett.53.1252
Abstract
An atomically abrupt Al-GaAs interface was observed for Si-doped GaAs at 200 K by atom-probe mass spectroscopy. At 300 K an Al-As mixed layer having a low As concentration and containing no Ga was formed. Formation of the mixed layer at 200 K for Zn-doped GaAs could be attributed to a promoted reaction by Zn. A decrease in the thickness of the unreacted Al layer, an increase in the As concentration in the mixed layer with temperature, and the abrupt AlAs-GaAs interface indicate Al diffusion into GaAs and stable Al-As bonding.Keywords
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