Properties of silicon surface cleaned by hydrogen plasma
- 1 April 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (13) , 1378-1380
- https://doi.org/10.1063/1.105211
Abstract
Properties of the silicon surface cleaned by the irradiation of the hydrogen electron cyclotron resonance plasma has been studied by x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and Fourier transform infrared spectroscopy. It was confirmed that the irradiation of the hydrogen plasma eliminated both a native oxide layer and a contaminated carbon layer from the silicon surface. In addition, it was found that the surface has the retardation effect on the air oxidation at room temperature. However, the plasma irradiation caused the minute roughness on the surface and hydrogen penetration into the bulk.Keywords
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