A multilevel metallized DSA MOS masterslice
- 1 August 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 14 (4) , 764-766
- https://doi.org/10.1109/JSSC.1979.1051258
Abstract
A new LSI with high-speed capability and high-packing density for computer use has been successfully achieved within a short turnaround time by a new DSA MOS masterslice. Two-level metallization has been accomplished by the use of full plasma processes. The average gate delay time of the new masterslice was improved to 2 ns compared with 3 ns in the case of single-level metallization.Keywords
This publication has 1 reference indexed in Scilit:
- A 920 gate DSA MOS mastersliceIEEE Journal of Solid-State Circuits, 1978