The relations for electron effective masses of strained InxGa1−xAs layers
- 16 February 1991
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 123 (2) , K133-K137
- https://doi.org/10.1002/pssa.2211230230
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Band nonparabolicities in lattice-mismatch-strained bulk semiconductor layersPhysical Review B, 1990
- Compositional dependences of band-gap energy and electron and light hole effective masses in InxGa1−xAsPhysica Status Solidi (a), 1989
- Band-edge discontinuities of strained-layer InxGa1−xAs/GaAs heterojunctions and quantum wellsApplied Physics Letters, 1989
- Optical studies of InxGa1−xAs/GaAs strained-layer quantum wellsApplied Physics Letters, 1989