On-wafer characterization, modelling, and optimization of InP-based HEMTs, PIN-photodiodes and monolithic receiver-OEICs for fiber-optic communication
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 567-570 vol.2
- https://doi.org/10.1109/mwsym.1992.188044
Abstract
The authors present results achieved with receiver OEICs (optoelectronic integrated circuits) consisting of InGaAs PIN-photodiodes and InAlAs/InGaAs HEMTs (high electron mobility transistors) grown by low-pressure MOVPE (metalorganic vapor phase epitaxy) on semi-insulating InP substrates. Both devices were realized on the same wafer. A 3-dB bandwidth of 1.6 GHz and an open eye at 3.0 Gb/s NRZ modulation of the monolithically integrated photoreceiver were obtained by on-wafer characterization.Keywords
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