Metal-Insulator Transitions in the Kondo Insulator FeSi and Classic Semiconductors Are Similar
- 7 April 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 78 (14) , 2831-2834
- https://doi.org/10.1103/physrevlett.78.2831
Abstract
We have observed the metal-insulator transition in the strongly correlated insulator FeSi with the chemical substitution of Al at the Si site. The magnetic susceptibility, heat capacity, and field-dependent conductivity are measured for Al concentrations ranging from 0 to 0.08. For concentrations we find metallic properties quantitatively similar to those measured in with the exception of a greatly enhanced quasiparticle mass. Below 2 K the temperature and field-dependent conductivity can be completely described by the theory of disordered Fermi liquids.
Keywords
This publication has 24 references indexed in Scilit:
- Dynamical Signature of the Mott-Hubbard Transition in Ni(S,Se) 2Science, 1996
- Singlet Semiconductor to Ferromagnetic Metal Transition in FeSiPhysical Review Letters, 1996
- Coulomb interactions in Al doped FeSi at low temperaturesAnnalen der Physik, 1996
- Nonlinear excitation of capillary waves by the Marangoni motion induced with a modulated laser beamPhysical Review B, 1995
- Sum-frequency generation with a free-electron laser: A study of gallium phosphidePhysical Review A, 1994
- Electronic structure of the high-temperature oxide superconductorsReviews of Modern Physics, 1989
- Spin-orbit and paramagnon effects on magnetoconductance and tunnelingPhysical Review B, 1984
- Metal-insulator transition in Si: AsPhysical Review B, 1983
- Metal-insulator transition in a doped semiconductorPhysical Review B, 1983
- Sharp Metal-Insulator Transition in a Random SolidPhysical Review Letters, 1980