Al-doped and Sb-doped polycrystalline silicon obtained by means of metal-induced crystallization
- 1 November 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (9) , 3726-3732
- https://doi.org/10.1063/1.339256
Abstract
Thin-film multilayer structures of a-Si/Al/a-Si and a-Si/Sb/a-Si were deposited by electron-beam evaporation. The microstructure and the electrical properties of as-deposited and annealed (T<1370 K) thin films were determined. A p-n junction was formed between polycrystalline silicon (poly-Si) doped with Sb and a p-type Si substrate. Al and Sb were found to induce crystallization of a-Si at 600 and 700 K, respectively. After annealing to 1370 K for 60 min, the resistivities 7.0×10−3 Ω cm for the Al-Si sample and 1.4×10−2 Ω cm for the Sb-Si sample were obtained. Passivation of poly-Si grain boundaries by Sb is proposed.This publication has 20 references indexed in Scilit:
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