Lichtemittierende Dioden
- 1 January 1977
- journal article
- research article
- Published by Wiley in Physik in unserer Zeit
- Vol. 8 (3) , 67-77
- https://doi.org/10.1002/piuz.19770080303
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Free-exciton radiation from p-i-n diodes of GaP doped with indium and oxygenApplied Physics Letters, 1976
- Growth and characterization of liquid−phase epitaxial InxGa1−xAsJournal of Applied Physics, 1975
- A new method of growing GaP crystals for light-emitting diodesProceedings of the IEEE, 1973
- Vapor phase epitaxial materials for LED applicationsProceedings of the IEEE, 1973
- The luminescent properties of nitrogen doped GaAsP light emitting diodesJournal of Electronic Materials, 1973
- Luminescence in GaNJournal of Luminescence, 1973
- Light-emitting diodesProceedings of the IEEE, 1972
- Light-emitting diodesIEEE Transactions on Electron Devices, 1971
- Efficiency of recombination radiation in GaPPhysics Letters, 1964