P wells made of porous silicon for power devices: determination of the formation steps
- 1 January 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 255 (1-2) , 321-324
- https://doi.org/10.1016/0040-6090(94)05674-3
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Porous silicon formation mechanismsJournal of Applied Physics, 1992
- Preferential propagation of pores during the formation of porous silicon: A transmission electron microscopy studyApplied Physics Letters, 1989
- An experimental and theoretical study of the formation and microstructure of porous siliconJournal of Crystal Growth, 1985
- Analysis of a junction termination structure for ideal breakdown voltage in p-n junction devicesIEEE Transactions on Electron Devices, 1980