X-ray imaging with a charge-coupled device fabricated on a high-resistivity silicon substrate
- 1 July 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (1) , 55-57
- https://doi.org/10.1063/1.92561
Abstract
In this letter results are reported on x‐ray imaging experiments performed with a buried channel charge‐coupled‐device line array optimized for photon sensing in the 1–10‐keV range. Optimization was achieved by increasing the depletion depth of the device to 254 μ. A near‐unity detector quantum efficiency (98%) was thus achieved. There was no observable image blurring due to diffusive spreading of signal charge as a result of the field‐assisted transport to the well minima.Keywords
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