Visible Luminescence Induced by Si-Ion Implantation into Si Single Crystals Covered with a Thin SiO2Layer
- 1 August 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (8A) , L1019-1021
- https://doi.org/10.1143/jjap.36.l1019
Abstract
An investigation of Si ion implantation into Si single crystals covered with a SiO2layer of various thicknesses (1000–3000 Å) was conducted and new characteristic luminescence bands were observed. A visible band that peaked around 1.89 or 2.0 eV was observed from the as-implanted samples. After high temperature post annealing, a visible band located in the range of 1.7 eV was detected. Interestingly, a new luminescence band around 1.5 eV was observed, for the first time, in a sample covered with a 3000 Å SiO2layer, after high dose implantation and annealing. We report, in this letter, the experimental results and a brief discussion concerning the various possible mechanisms responsible for the observed luminescence bands.Keywords
This publication has 15 references indexed in Scilit:
- Visible photoluminescence in Si+-implanted thermal oxide films on crystalline SiApplied Physics Letters, 1994
- Luminescence properties of nanometer-sized Si crystallites: Core and surface statesPhysical Review B, 1994
- Luminescence of Silicon Materials: Chains, Sheets, Nanocrystals, Nanowires, Microcrystals, and Porous SiliconThe Journal of Physical Chemistry, 1994
- Role of interfacial oxide-related defects in the red-light emission in porous siliconPhysical Review B, 1994
- Visible photoluminescence from oxidized Si nanometer-sized spheres: Exciton confinement on a spherical shellPhysical Review B, 1993
- Visible photoluminescence related to Si precipitates in Si+-implanted SiO2Journal of Physics: Condensed Matter, 1993
- Crystal Structure and Optical Properties of Cd 32 S 14 (SC 6 H 5 ) 36 . DMF 4 , a Cluster with a 15 Angstrom CdS CoreScience, 1993
- Visible Photoluminescence from Si Microcrystalline Particles*Japanese Journal of Applied Physics, 1993
- Electronic structure of silicon-oxygen high polymersSolid State Communications, 1993
- Some Perspectives on the Luminescence Mechanism Via Surface-Confined States of Porous SiMRS Proceedings, 1992