Visible photoluminescence related to Si precipitates in Si+-implanted SiO2
- 2 August 1993
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 5 (31) , L375-L380
- https://doi.org/10.1088/0953-8984/5/31/002
Abstract
The authors have investigated visible photoluminescence from Si+-implanted SiO2. It is found that a luminescence band observed around 2.0 eV in as-implanted specimens disappears on annealing to 500 degrees C and then a band around 1.7 eV appears on annealing to 1100 degrees C. They discuss the origin of the luminescence hands in terms of the defects in SiO2 and the Si nanocrystals grown in SiO2.Keywords
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