Germanium epitaxial growth in closed ampoules: I. Experimental results — 1D modelling
- 1 October 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 92 (1-2) , 323-331
- https://doi.org/10.1016/0022-0248(88)90465-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Interaction between convection and surface reactions in physical vapor transport in rectangular, horizontal enclosuresJournal of Crystal Growth, 1986
- Vapor transport and epitaxial growth of Ge in a Ge/GeI4 closed system by the forced flux methodJournal of Crystal Growth, 1986
- Croissance de couches minces monocristallines de germanium par transport en phase vapeur en régime diffusionnel forcéJournal of Crystal Growth, 1983
- Controle de la croissance cristalline, a partir de la phase vapeur, en tube fermeMaterials Research Bulletin, 1981