Vapor transport and epitaxial growth of Ge in a Ge/GeI4 closed system by the forced flux method
- 1 April 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 74 (3) , 559-567
- https://doi.org/10.1016/0022-0248(86)90202-2
Abstract
No abstract availableKeywords
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