Hydrogen-related center with tetrahedral symmetry in ion-implanted silicon

This publication has 12 references indexed in Scilit:

• Interaction of deuterium with defects in silicon studied by means of channeling
  Physical Review B, 1988
• Hydrogen in crystalline semiconductors
  Applied Physics A, 1987
• New Si-H IR bands in neutron-irradiated silicon grown in hydrogen atmosphere
  Physica Status Solidi (a), 1987
• The isotope study of the SiH absorption peaks in the FZSi grown in hydrogen atmosphere
  Solid State Communications, 1985
• Hydrogen Implantation into Silicon. Infra-Red Absorption Spectra and Electrical Properties
  Physica Status Solidi (a), 1985
• The Nature of Two Intense Si–H IR Stretching Bands in FZ‐Si:H
  Physica Status Solidi (b), 1985
• Infrared absorption of silicon irradiated by protons
  Physica Status Solidi (b), 1978
• Bonding and thermal stability of implanted hydrogen in silicon
  Journal of Electronic Materials, 1975
• Uniaxial stress splitting of doubly degenerate states of tetragonal and trigonal centres in cubic crystals
  Proceedings of the Physical Society, 1967
• Normal-Coordinate Treatment and Computation of Coriolis Coefficients and Ground-State Centrifugal-Distortion Constants of Digermane, Disilane, Methylgermane, and Methylsilane
  The Journal of Chemical Physics, 1966