Terahertz imaging with GaAs field-effect transistors
- 13 March 2008
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 44 (6) , 408-409
- https://doi.org/10.1049/el:20080172
Abstract
Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.Keywords
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