Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of $120–300\mathrm{nm}$ have been studied as room temperature plasma wave detectors of $0.7\mathrm{THz}$ electromagnetic radiation. In agreement with the plasma wave detection theory, the response was found to depend on the gate length and the gate bias. The obtained values of responsivity $(⩽200\mathrm{V}∕\mathrm{W})$ and noise equivalent power $(⩾{10}^{-10}\mathrm{W}∕{\mathrm{Hz}}^{0.5})$ demonstrate the potential of Si MOSFETs as sensitive detectors of terahertz radiation.