Low ballistic mobility in submicron HEMTs
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- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (9) , 511-513
- https://doi.org/10.1109/led.2002.802679
Abstract
Ballistic effects in short channel high electron mobility transistors (HEMTs) greatly reduce the field effect mobility compared to that in long gate structures. This reduction is related to a finite electron acceleration time in the channel under the device gate. As an example, the field effect mobility at room temperature in 0.15-/spl mu/m gate AlGaAs/GaAs HEMTs cannot exceed 3000 cm/sup 2//V-s. These predictions are consistent with the values of the field effect mobility extracted from the measured AlGaAs/GaAs HEMT current-voltage characteristics.Keywords
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