Fano profiles of absorption lines from the localised vibrational modes of Be acceptors in GaAs and B acceptors in silicon
- 1 June 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (6) , 423-426
- https://doi.org/10.1088/0268-1242/4/6/001
Abstract
Infrared absorption measurements have been made of the LVMS of 9Be acceptors in MBE GaAs and 10B and 11B acceptors in ion-implanted Si. The former line is asymmetric, while the latter lines occur as anti-resonances in the electronic continuum. Following 2 MeV electron irradiation to effect electrical compensation, symmetrical lines were observed. The new data for GaAs:Be explain an apparent anomaly relating to LVM line strengths in hydrogen-passivated material.Keywords
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