The Knight shift in doped indium arsenide and in doped indium antimonide in the extreme quantum limit

Publisher Website
Google Scholar
Abstract
Measurements of the Knight shift performed at helium temperatures are reported for heavily doped, n-type, indium arsenide and indium antimonide in magnetic fields up to 8.0 T. Such fields, in samples of the doping densities used here, are sufficient to fully polarise the electronic spins in some of the samples, so that all ambiguity about the state of the electronic magnetisation is removed. In such circumstances the shift is a direct measure of the magnitude and character of the conduction electron wavefunction at the group III and the group V nuclear sites. The results show strong indium character at the bottom of the band, particularly so in the indium arsenide samples. Quantitative comparisons are made with nonlocal pseudopotential calculations of band structures and charge densities in the two semiconductors.