Overlayer systems: Suitable samples for probing heterojunction interface properties
- 31 December 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 36 (11) , 961-964
- https://doi.org/10.1016/0038-1098(80)91191-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Electronic structure of the Ge-GaAs and Ge-ZnSe (100) interfacesPhysical Review B, 1980
- Electronic structure of Ge overlayers on (100) GaAsJournal of Vacuum Science and Technology, 1979
- Electronic structure in GaAs/Ge through angle-resolved photoemissionJournal of Vacuum Science and Technology, 1979
- (110) surface atomic structures of covalent and ionic semiconductorsPhysical Review B, 1979
- Self-consistent calculations of interface states and electronic structure of the (110) interfaces of Ge-GaAs and AlAs-GaAsPhysical Review B, 1978