The ideal (111), (110) and (100) surfaces of Si, Ge and GaAs; A comparison of their electronic structure
- 2 February 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 92 (2-3) , 365-384
- https://doi.org/10.1016/0039-6028(80)90209-5
Abstract
No abstract availableKeywords
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