Design of high-power strained InGaAs/AlGaAs quantum-welllasers with a vertical divergence angle of 18°

13 April 1995

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 31 (8) , 642-644
https://doi.org/10.1049/el:19950448

Abstract

Epitaxial structures were designed for high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical-divergence emitting angle of 18°. A maximum free-space optical output of >500 mW and a singlemode-fibre coupled power of >250 mW were obtained.

Keywords

This publication has 3 references indexed in Scilit:

Strained InGaAs quantum well lasers with small-divergenceangles for high-power pump modules
Electronics Letters, 1994
Low-loss laser diode module using a molded aspheric glass lens
IEEE Photonics Technology Letters, 1990
High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasers
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1990