Lower-temperature plasma etching of Cu films using infrared radiation
- 8 November 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (19) , 2703-2704
- https://doi.org/10.1063/1.110401
Abstract
The etching of Cu films is achieved at lower temperature (150 °C) with Cl2 plasma by IR light radiation. Anisotropic fine Cu patterns are obtained. The etch rate is 4000 Å/min and there are no microloading effects. It is considered that the etching temperature lowering and the anisotropy are realized by the IR light enhancement of CuClx desorption.Keywords
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