Improving the Transient Response of a Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe:H Film
- 1 March 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (3S)
- https://doi.org/10.1143/jjap.36.1494
Abstract
An annealed intrinsic hydrogenated amorphous silicon germanium (i-a-SiGe:H) barrier layer deposited on a Si wafer ([111], 4 k Ω-cm) was employed to fabricate a planar interdigitated metal-semiconductor-metal photodetector (MSM-PD). At a bias of 15 V, and an incident light wavelength of 850 nm, this Si-based MSM-PD with an annealed 70 nm i-a-SiGe:H film had a responsivity of about 0.32 A/W, and a dark current density of around 400 fA/µ m2. Also, the temporal response of this device had a rise time of 21 ps, a fall-time of 236 ps and a full-width at half-maximum (FWHM) of 51 ps.Keywords
This publication has 8 references indexed in Scilit:
- Transient photocurrent in hydrogenated amorphous silicon and implications for photodetector devicesJournal of Applied Physics, 1996
- High-performance metal-semiconductor-metalphotodetector with a thin hydrogenated amorphoussilicon layer on crystalline siliconElectronics Letters, 1995
- Ion implantation enhanced metal-Si-metal photodetectorsIEEE Photonics Technology Letters, 1994
- 110 GHz Si MSM photodetectorsIEEE Transactions on Electron Devices, 1993
- Schottky barrier junctions of hydrogenated amorphous silicon-germanium alloysJournal of Applied Physics, 1987
- Proton nuclear magnetic resonance study on hydrogen incorporation in amorphous-microcrystalline mixed-phase hydrogenated siliconJournal of Applied Physics, 1984
- Observation and analysis of very rapid optical degradation of GaAs/GaAlAs DH laser materialApplied Physics Letters, 1976
- Anomalous transit-time dispersion in amorphous solidsPhysical Review B, 1975