Influence of deposition temperature on the structure of 3,4,9,10-perylene tetracarboxylic dianhydride thin films on H-passivated silicon probed by Raman spectroscopy
- 31 December 2000
- journal article
- research article
- Published by Elsevier in Organic Electronics
- Vol. 1 (1) , 49-56
- https://doi.org/10.1016/s1566-1199(00)00008-2
Abstract
No abstract availableKeywords
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