Channeling implants of B ions into silicon surfaces

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Abstract
The profiles of boron ions impinging along the axis of silicon single crystal at energies in the 80–700 keV range were measured by SIMS. By a simple subtraction procedure the distributions for aligned incidence of the beam were decomposed into a random and into a channeled profile. The corresponding mean ranges, Rr , for random and Rc for channeled particles, as well as the “maximum” range Rm for well-channeled particles were compared with values calculated by appropriate theoretical models. For well-channeled particles the reduced electronic stopping power in the center of the channel was calculated assuming an exponential dependence of the impact parameter. It turned out. that all measured values could be reproduced by this theoretical model.

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