Imaging of near-neighbor atoms in semiconductors by photoelectron holography
- 3 February 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 68 (5) , 650-653
- https://doi.org/10.1103/physrevlett.68.650
Abstract
We have measured and calculated the full intensity profiles for Si 2p photoelectron emission from Si(111), and have analyzed these via a two-dimensional Fourier-transform holographic inversion procedure. The resulting images associated with two symmetry-inequivalent emitter types exhibit elongated features corresponding to near-neighbor atoms in the first (111) double layer above a given emitter, and are found to improve in quality if strong forward-scattering peaks are removed in a smooth way.Keywords
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