Shubnikov-de Haas effect and effective mass inn-InP in dependence on carrier concentration
- 1 September 1994
- journal article
- research article
- Published by Springer Nature in Zeitschrift für Physik B Condensed Matter
- Vol. 95 (3) , 281-285
- https://doi.org/10.1007/bf01343953
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- The k.p interaction in InP and GaAs from the band-gap dependence of the effective massJournal of Physics C: Solid State Physics, 1984
- The electron effective mass in heavily doped GaAsJournal of Physics C: Solid State Physics, 1979
- Photovoltaic effect and interband magneto-optical transitions in InPPhysical Review B, 1975
- Experimental phase shifts in magnetophonon resonanceJournal of Physics C: Solid State Physics, 1975
- Effet Shubnikov-de Haas dans InPSolid State Communications, 1971
- The magnetophonon effect in epitaxial films of n-type inpJournal of Physics C: Solid State Physics, 1971
- Cyclotron resonance with epitaxial films of n type inpJournal of Physics C: Solid State Physics, 1971
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967
- Influence of Impurities on the de Haas-van Alphen EffectPhysical Review B, 1966
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957