Substrate noise coupling through planar spiral inductor
- 1 June 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 33 (6) , 877-884
- https://doi.org/10.1109/4.678650
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- A physical model for planar spiral inductors on siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Experimental results and modeling of noise coupling in a lightly doped substratePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductorsIEEE Journal of Solid-State Circuits, 1997
- A 1.5-V, 1.5-GHz CMOS low noise amplifierIEEE Journal of Solid-State Circuits, 1997
- High Q inductors for wireless applications in a complementary silicon bipolar processIEEE Journal of Solid-State Circuits, 1996
- A 2.4-GHz silicon bipolar oscillator with integrated resonatorIEEE Journal of Solid-State Circuits, 1996
- A simple approach to modeling cross-talk in integrated circuitsIEEE Journal of Solid-State Circuits, 1994
- Experimental results and modeling techniques for substrate noise in mixed-signal integrated circuitsIEEE Journal of Solid-State Circuits, 1993
- A Si bipolar monolithic RF bandpass amplifierIEEE Journal of Solid-State Circuits, 1992
- Design of Planar Rectangular Microelectronic InductorsIEEE Transactions on Parts, Hybrids, and Packaging, 1974