Very low-noise Al0.3Ga0.7As/Ga0.65In0.35As/GaAs single quantum-well pseudomorphic HEMTs
- 4 January 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (1) , 27-28
- https://doi.org/10.1049/el:19900018
Abstract
AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.Keywords
This publication has 2 references indexed in Scilit:
- A 0.15 mu m gate-length pseudomorphic HEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Design, fabrication, and characterization of ultra high speed AlGaAs/InGaAs MODFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003