Low hydrogen content silicon nitride films grown by chemical vapor deposition using microwave excited hydrogen radicals
- 1 August 1991
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (8) , 529-533
- https://doi.org/10.1007/bf02666013
Abstract
No abstract availableKeywords
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- Characterization of plasma-deposited silicon nitride filmsJournal of Applied Physics, 1980
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978
- Advances in deposition processes for passivation filmsJournal of Vacuum Science and Technology, 1977