Manufacturing-compatible methods for the formation of Cu(In,Ga)Se/sub 2/ thin films
- 1 January 1996
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 889-892
- https://doi.org/10.1109/pvsc.1996.564271
Abstract
The authors have developed suitable methods of Cu(In,Ga)Se/sub 2/ thin-film formation for application in large-scale manufacturing equipment. Total-area solar cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and V/sub OC/ uniformity data are also presented. The film formation involves sequential deposition of compound selenides, Se, and Cu. The fill factor of some devices was improved by deposition of a thin terminal In-Se layer, and surface modification by chemical treatments also improved device performance.Keywords
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