Negatively charged excitions (X−) and D− triplet transitions in GaAs/Al0.3Ga0.7As multiple quantum wells
- 20 July 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 361-362, 363-367
- https://doi.org/10.1016/0039-6028(96)00422-0
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Optical Spectroscopy of a Two-Dimensional Electron Gas near the Metal-Insulator TransitionPhysical Review Letters, 1995
- Triplet transitions ofD−centers in quantum wells in high magnetic fieldsPhysical Review B, 1994
- Spectroscopy of quasi-2D D− ions in the presence of excess electronsSurface Science, 1994
- Observation of negatively charged excitonsin semiconductor quantum wellsPhysical Review Letters, 1993
- Many-electron effects on quasi-two-dimensional shallow-donor impurity states in high magnetic fieldsPhysical Review Letters, 1993
- Two-dimensional D- centers in the strong magnetic field limitSolid State Communications, 1992
- Definitive identification ofcenters in GaAs quantum wells by tilt-induced line splitting in a magnetic fieldPhysical Review Letters, 1992
- Two-dimensionalcentersPhysical Review Letters, 1990
- Ground state energy and optical absorption of excitonic trions in two dimensional semiconductorsSuperlattices and Microstructures, 1989
- Existence and Binding Energy of the Excitonic IonPhysica Status Solidi (b), 1974