Initial stage of heteroepitaxy of Ge on Si(111)-7 × 7 and (100)-2 × 1 surfaces studied by low-energy electron-loss spectroscopy (LEELS)
- 31 January 1988
- journal article
- Published by Elsevier in Surface Science
- Vol. 193 (1-2) , 193-211
- https://doi.org/10.1016/0039-6028(88)90331-7
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Raman scattering involving umklapp processes insuperlatticesPhysical Review B, 1986
- Photoemission study of Si(111)-Ge(5×5) surfacesPhysical Review B, 1986
- Growth and surface structure of Ge–Si alloy films on Si(111)-(7×7)Journal of Vacuum Science & Technology A, 1986
- Measurement of the band gap of GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Heteroepitaxial growth of Ge films on the Si(100)-2×1 surfaceJournal of Applied Physics, 1985
- 7×7 Reconstruction of Ge(111) Surfaces under Compressive StrainPhysical Review Letters, 1985
- LEED/AES Studies of the Ge on Si(111)7×7 SurfaceJapanese Journal of Applied Physics, 1983
- Low-energy electron-loss spectroscopy and Auger-electron-spectroscopy studies of noble-metal—silicon interfaces: Si-Au systemPhysical Review B, 1982
- Low energy electron loss spectroscopy of Si–Ge interfacesJournal of Vacuum Science and Technology, 1981
- Low-energy-electron-loss spectroscopy of Ge surfacesPhysical Review B, 1976