Low drive voltage GaAs quantum well electroabsorption modulators obtained with a displaced junction

Publisher Website
Google Scholar
Abstract
A reduction in the drive voltage of an electroabsorption waveguide modulator based on an AlGaAs/GaAs quantum well laser heterostructure is demonstrated by a simple change in the position of the p-n junction relative to the quantum well. This is accomplished by adjusting the doping profile and does not significantly alter the operation of the structure as a laser or degrade other aspects of device performance such as reverse breakdown voltage and series resistance. A contrast ratio of 25 dB (5 dB/100 /spl mu/m) was obtained with a bias change of -2 V.