On the radiative recombination in ZnIn2S4
- 16 August 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 90 (2) , 691-701
- https://doi.org/10.1002/pssa.2210900235
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Optical Measurements and Temperature Dependence of the Energy Gap in ZnIn2S4 Layered CompoundPhysica Status Solidi (b), 1984
- The peculiarities of ZnIn2S4 luminescenceIl Nuovo Cimento D, 1983
- Fundamental optical constant of the layered semiconductor ZnIn2S4Solid State Communications, 1979
- Trap distribution in ZnIn2S4from photoconductivity analysisJournal of Physics D: Applied Physics, 1976
- Optical transitions and distribution of localized levels in ZnIn2S4Physica Status Solidi (a), 1976
- Recombination centres and traps in ZnIn2S4Journal of Luminescence, 1975
- Photoelectronic properties of ZnIn2S4Physica Status Solidi (a), 1974
- Optical properties of a ‘quasi-disordered’ semiconductor: ZnIn2S4Solid State Communications, 1973
- Charge storage in ZnIn2S4 single crystalsApplied Physics Letters, 1973
- Electric field variation of photoconductivity quenching due to hot electron capture in ZnIn2S4Physica Status Solidi (a), 1972