Properties of AlGaAs buried heterostructure lasers and laser arrays grown by a two-step metalorganic chemical vapor deposition
- 23 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (25) , 1716-1718
- https://doi.org/10.1063/1.97024
Abstract
High quality buried heterostructure (BH) lasers were grown by a two-step metalorganic chemical vapor deposition. Single stripe BH lasers exhibited thresholds of 20 mA for a 1.2-μm stripe. The spectral output emits in a single transverse and longitudinal mode up to 15 mW, with a side lobe suppression greater than 23 dB at 5 mW output. BH laser arrays were fabricated with threshold currents of 130 mA and differential efficiencies of 70% for a 10-stripe array.Keywords
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