Current threshold uniformity of shallow proton stripe GaAlAs double heterostructure lasers grown by metalorganic-chemical vapor deposition
- 15 January 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (2) , 118-119
- https://doi.org/10.1063/1.93007
Abstract
Stripe geometry lasers grown by metalorganic-chemical vapor deposition lasing at 8260 Å (∼7% Al in the active region) are described. Pulsed current thresholds vary little with stripe width for 4-, 6-, and 8-μm stripe widths. For 51 lasers that are 200±10 μm long with 4-, 6-, or 8-μm stripe widths, the average threshold currents were 40.4, 41.1, and 42 mA, respectively, and 37 of these lasers fall within ±1 mA of these averages. External differential quantum efficiencies for these same lasers are 75, 67, and 63%.Keywords
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